Polysilicon temperature sensor

Temperature dependence of polysilicon electrical resistance is investigated using existing polysilicon electrical conduction models. Conducted simulations showed the possibility of producing polysilicon resistors having a stable resistance on temperature dependence. A new polysilicon temperature sensor structure is proposed and processed according to optimal specifications. Measurements conducted on the processed samples showed that they have an almost linear resistance vs. temperature characteristic in a wide temperature range from 200 to 800 K.