DocumentCode
36578
Title
Characterization of Silicon Photomultipliers for nEXO
Author
Ostrovskiy, I. ; Retiere, F. ; Auty, D. ; Dalmasson, J. ; Didberidze, T. ; DeVoe, R. ; Gratta, G. ; Huth, L. ; James, L. ; Lupin-Jimenez, L. ; Ohmart, N. ; Piepke, A.
Author_Institution
Phys. Dept., Stanford Univ., Stanford, CA, USA
Volume
62
Issue
4
fYear
2015
fDate
Aug. 2015
Firstpage
1825
Lastpage
1836
Abstract
Silicon Photomultipliers (SiPMs) are attractive candidates for light detectors for next generation liquid xenon double-beta decay experiments, like nEXO (next Enriched Xenon Observatory). In this paper we discuss the requirements that the SiPMs must satisfy in order to be suitable for nEXO and similar experiments, describe the two test setups operated by the nEXO collaboration, and present the results of characterization of SiPMs from several vendors. In particular, we find that the photon detection efficiency at the peak of xenon scintillation light emission (175-178 nm) approaches the nEXO requirements for tested FBK and Hamamatsu devices. Additionally, the nEXO collaboration performed radio-assay of several grams of bare FBK devices using neutron activation analysis, indicating levels of 40K, 232Th, and 238U of the order of <; 0.15, (6.9 · 10- 4 - 1.3 · 10- 2), and <; 0.11 mBq/kg, respectively.
Keywords
photomultipliers; silicon radiation detectors; FBK devices; Hamamatsu devices; light detectors; nEXO collaboration; neutron activation analysis; next Enriched Xenon Observatory; next generation liquid xenon double-beta decay experiments; performed radio-assay; photon detection efficiency; silicon photomultipliers; xenon scintillation light emission; Detectors; Liquids; Noise; Photodetectors; Temperature measurement; Uncertainty; Xenon; Photodetectors; silicon photomultipliers; xenon detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2015.2453932
Filename
7182368
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