• DocumentCode
    3659142
  • Title

    Advanced process technologies of 1S1R for high density cross point ReRAM

  • Author

    Beom Yong Kim;Hyeong Soo Kim

  • Author_Institution
    New Memory Process Team, R&
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    2Xnm cross point cell array of 1S1R has been investigated using advanced process technologies which include 1) a spacer to protect a selector material, 2) a selector to reduce sneak current, and 3) a resistor to have proper amount of oxygen vacancies (Vo). With such technologies optimization, the excellent bipolar 1S1R switching characteristics with low sneak current (300nA), low power operation (30μA), and high on/off ratio (>30) were acquired.
  • Keywords
    "Tin","Switches","Arrays","Resistors","Electrodes","Resistance","Standards"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275276
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659142