• DocumentCode
    3659153
  • Title

    Performance of GAA poly-Si channel of junctionless field effect transistors with ultra-thin body

  • Author

    Yan-Bo Liu;Yi-Ruei Jhan;Cheng-Ping Wang;Yung-Chun Wu

  • Author_Institution
    Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Agate-all-around (GAA) with trench structure poly-Si channel junctionless Field-Effect Transistor (JL-FET) has been successfully demonstrated. This JL-FET shows excellent performance in a low drain-induced barrier lowering (DIBL), a steep Sub-threshold Swing (SS) ~70 mV/decade and high ION/IOFF (>108) ratio.
  • Keywords
    "Logic gates","Annealing","Lithography","Scanning electron microscopy","Performance evaluation","Doping","Silicon"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659153