• DocumentCode
    3659176
  • Title

    Thermodynamic stability of high phosphorus concentration in silicon nanostructures

  • Author

    Michele Perego;Gabriele Seguini;Elisa Arduca;Jacopo Frascaroli;Davide De Salvador;Massimo Mastromatteo;Alberto Carnera;Giuseppe Nicotra;Mario Scuderi;Corrado Spinella;Giuliana Impellizzeri;Cristina Lenardi;Enrico Napolitani

  • Author_Institution
    Lab. MDM, IMM, Agrate Brianza, Italy
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this work we focus on P doping of Si nanocrystals (NCs) embedded in a SiO2 matrix. We prove that, at equilibrium, high P concentrations within the Si NCs are thermodynamically favoured. We experimentally estimate the energy barriers for P diffusion in SiO2 and trapping/de-trapping at the SiO2/Si NCs interface, obtaining a complete picture of the system at equilibrium.
  • Keywords
    "Silicon","Nanocrystals","Annealing","Thermodynamics","Doping","Stability analysis"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275310
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659176