• DocumentCode
    3659189
  • Title

    Dopant-assisted tunnel-current enhancement in two-dimensional Esaki diodes

  • Author

    H. N. Tan;D. Moraru;K. Tyszka;A. Sapteka;S. Purwiyanti;L. T. Anh;M. Manoharan;T. Mizuno;R. Jablonski;D. Hartanto;H. Mizuta;M. Tabe

  • Author_Institution
    Research Institute of Electronics, Shizuoka University, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We study ultrathin (2D) lateral Si Esaki tunneling diodes, and find that anomalous current peaks and humps are observed to be superimposed on the ordinary negative differential conductance (NDC). The remarkable enhancement of interband tunneling current is primarily ascribed to resonant tunneling via gap-states created by large potential fluctuation due to prominent inhomogeneity of dopant distribution (dopant-clusters) in the 2D depletion region.
  • Keywords
    "Energy states","Fluctuations","Junctions","Semiconductor process modeling","Silicon","Resonant tunneling devices"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659189