• DocumentCode
    3659195
  • Title

    Charge sensing of p-channel double quantum dots fabricated on (110) silicon substrate

  • Author

    K. Iwasaki;T. Kodera;S. Oda

  • Author_Institution
    Department of Physical Electronics, Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1, Ookayama, Megruro-ku, Tokyo, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We fabricate and characterize p-channel double quantum dots (DQDs). The DQDs are formed on a silicon-on-insulator (SOI) wafer and integrated with a single hole transistor (SHT) as a charge sensor. We observe charge stability diagram of the DQDs in the characteristic of the charge sensor. Furthermore, few-hole regime in the DQDs is clearly obtained.
  • Keywords
    "Silicon","Quantum dots","Substrates","Logic gates","Silicon-on-insulator","Transistors","Tunneling"
  • Publisher
    ieee
  • Conference_Titel
    Silicon Nanoelectronics Workshop (SNW), 2015
  • Type

    conf

  • Filename
    7275329
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3659195