• DocumentCode
    3664637
  • Title

    2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

  • Author

    Xiao Xu;Xin Yang;Toshihiko Yoshimasu

  • Author_Institution
    The Graduate School of Information, Production and Systems, Waseda University 2-7 Hibikino Wakamatsu-ku Kitakyushu-city, Fukuoka, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    13
  • Lastpage
    16
  • Abstract
    An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285037
  • Filename
    7285037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664637