• DocumentCode
    3664649
  • Title

    Multi-finger Schottky-Barrier tunneling FET with hybrid operation mechanism for steep transition and high on current

  • Author

    Ru Huang;Qianqian Huang;Chunlci Wu;Jiaxin Wang;Cheng Chen;Hao Zhu;Lingyi Guo;Yangyuan Wang

  • Author_Institution
    Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing 100871 Innovation Center for MicroNanoelectronics and Integrated System, Beijing 100871, China
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    This paper discusses a kind of novel steep-slope switch device, named as multi-finger Schottky-Barrier TFET (MFSB-TFET), with hybrid adaptive operation mechanism, for higher on current, steeper slope as well as low off current. With the on state dominated by Schottky injection current, transition region dominated by band-to-band tunneling and the off current greatly suppressed with increased effective barrier height, the proposed silicon-based MFSB-TFET has experimentally demonstrated low SS, high on current and high on-off current ratio, exhibiting great potentials for ultra-low-power circuit applications.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285049
  • Filename
    7285049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664649