Accurate description of temperature accelerated NBTI effect using the universal prediction model

In this work, the temperature accelerated NBTI effect is modeled by a universal model. The investigation of the threshold voltage shift over a wide temperature range reveals distinct degradation mechanisms under low and high temperatures, which is supposed due to the influence of temperature to the Si-H bond activation energy and H₂ diffusivity. The active energy of the interface-state generation and the hole-trapping/detrapping time constant are found as monotonie functions of temperature. Universality of the proposed NBTI temperature model is also verified using SiON gate dielectric p-MOSFET with different nitrogen densities. The NBTI recovery characteristics under conditions of constant and variable temperature are accurate described.