• DocumentCode
    3664662
  • Title

    Radiation tolerant DC characteristics of InAs/GaAs quantum-dot diodes

  • Author

    Yifei Mu;Sang Lam;Cezhou Zhao;N. Babazadeh;Richard A. Hogg;K. Nishi;K. Takemasa;M Sugawara

  • Author_Institution
    Department of Electrical and Electronic Engineering, Xi´an Jiaotong-Liverpool University (XJTLU), Suzhou, Jiangsu Province 215123, China
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    Effects of 137Cs gamma irradiation on the DC electrical characteristics of InAs/GaAs quantum dots (QDs) mesa diodes are reported. The devices were irradiated with gamma-rays for different doses ranging from 100 rad to about 1 Mrad (GaAs). The QDs mesa diodes are found to be tolerant to γ radiation. No enhanced leakage current and shift in the turn-on voltage were observed in the InAs/GaAs QD devices after exposure to γ-radiation. When irradiated by γ-rays continuously, there seemed to be a small degradation trend in the forward-bias current after irradiating the mesa diode for about six hours.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285062
  • Filename
    7285062
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664662