Interface engineering to enhance phase change memory programmability

Despite the promise for resistive phase-change memory to be used in the BEOL memory integration, achieving low current programming and rapid thermal cycle management are still the main barriers in term of operation. In this work, different methods to reduce the programming current are examined with respect to their effects on thermal cycling during SET and RESET. In particular, the discussion will focus on the engineering of the electrode to phase-change material interface to achieve low programming current. Experimental demonstration and thermal simulation data are used to illustrate the concept and explain the device behaviors.