Ultra-low power green electronic devices

Power consumption is the crucial challenge for electronics. To lower the DC leakage power (P_DC), we applied the high-κ gate dielectric to CMOS from the physics of Q equivalent to CV. More than 2 orders of magnitude lower P_DC is obtained at small 0.5-0.9 nm equivalent-oxide-thickness (EOT). The high-κ dielectric also increases the charge controllability of flash memory and decrease the V_T disturbance by nearly cells, which improves cell density and cost. The AC power (P_AC) can be lowered by using high-mobility Ge CMOS at a lower V_D and 3D IC with a small capacitance, from basic physics of P_AC equivalent to CV_D²f/2.