Polarity and ambipolarity controllable (PAC) tunnel field effect transistor

Ambipolar conduction in Tunnel Field Effect Transistor (TFET) is a major challenge which limits its applications for energy efficient logic circuit designs. In this work a new device architecture i.e. PAC-TFET with Double Gate geometry has been proposed to control the polarity and ambipolar current conduction simultaneously. Two independently driven gates provide the opportunity to configure the polarity of TFET (n-type or p-type device operation) along with an additional control to suppress ambipolar current conduction.