• DocumentCode
    3664728
  • Title

    Modeling of reverse recovery effect for embedded diode in SJ MOSFET

  • Author

    R. Matsui;D. Suzuki;Y. Tanimoto;M. Kitamura;H. Kikuchihara;H. J. Mattausch;M. Miura-Mattausch

  • Author_Institution
    Advanced Sciences of Matter, Hiroshima University, Kagamiyama, Higashi-Hiroshima, Japan
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    375
  • Lastpage
    378
  • Abstract
    This investigation aims at developing a compact model for the embedded diode in Super-Junction MOSFETs applicable for more than 500V bias conditions. It is demonstrated that the reverse-recovery effect is different from the conventional stand-alone pin diode. The reason is the extension of the depletion at the additional p/n junction in the Super-Junction MOSFET under reverse bias applications. The depletion region prevents the current flow and thus forcing the rapid charge dissipation from the device. We have developed an embedded diode model on the basis of HiSIM-Diode originally developed for the conventional pin diode.
  • Keywords
    "Switches","PIN photodiodes","Charge carrier density","Junctions","MOSFET","Integrated circuit modeling","Electrodes"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285129
  • Filename
    7285129
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664728