Parameter optimization of a single well nanoscale resonant tunneling diode for memory applications

Resonant Tunneling Diodes opened the way for many applications as primary elements in nanoelectronics providing negative differential resistance and other nonlinear properties. In this work an optimization is done between peak voltage and peak to valley ratio, two most important figures of merit of a double barrier single well resonant tunneling diode for memory applications. It is seen that these two parameters strongly depend on well and barrier widths. In addition to that they also depend on doping concentrations at the contacts. Therefore an optimization is needed to fine tune all the structural parameters to get lowest peak voltage and a high Peak to valley ratio for memory applications.