Parameter extraction methodology for SOI-LDMOS transistors

A parameter extraction methodology to estimate the values of parameters corresponding to a highly accurate static compact model of a laterally double diffused metal oxide semiconductor (LDMOS) transistor is proposed. The model essentially consists of three voltage dependent current sources representing three regions in an LDMOS transistor. The extraction methodology is based on the idea that effects of few specific parameters dominate in the terminal characteristics in specific bias regimes. The LDMOS transistor is biased in different operating regions of the output characteristics to allow different data analysis for extracting specific sets of model parameters. The proposed methodology is validated by comparing the results of the compact model simulation using the extracted parameters with the numerical simulation data from MEDICI.