• DocumentCode
    3664777
  • Title

    Double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET: A proposal and analysis

  • Author

    K. P. Pradhan;D. Singh;S. K. Mohapatra;P. K Sahu

  • Author_Institution
    Department of Electrical Engineering, National Institute of Technology (NIT), Rourkela, 769008, Odisha India
  • fYear
    2015
  • fDate
    6/1/2015 12:00:00 AM
  • Firstpage
    575
  • Lastpage
    577
  • Abstract
    We consider the designing of double material gate oxide (DMGO) silicon-germanium on insulator (SGOI) double gate (DG) MOSFET. The fundamental objective in this work is to modify the channel potential, electric field and electron velocity for improving leakage current, transconductance (gm) and transconductance generation factor (TGF). Using 2-D simulation, we show that the DMGO-SGOI-DG MOSFET exhibits higher electron velocity at source side and lower electric field at drain side as compare to ultra-thin body (UTB) DG MOSFET. Moreover it demonstrates a significant improvement in gm and TGF in comparison to UTB-DG MOSFET.
  • Keywords
    "Conferences","Electron devices","Solid state circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits (EDSSC), 2015 IEEE International Conference on
  • Print_ISBN
    978-1-4799-8362-9
  • Type

    conf

  • DOI
    10.1109/EDSSC.2015.7285179
  • Filename
    7285179
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3664777