Modeling of the reverse gate leakage current of AlGaN/GaN HEMTs

Direct tunneling and trap-assisted tunneling models are modelled and implemented into APSYS™, a device simulation tool. By comparing with experimental data, the trap-assisted tunneling model was found to better describe leakage currents than the direct tunneling model. The trap-assisted tunneling model was shown to catch the temperature dependence of the gate leakage current from 300K to 500K.