Demonstration of TaOx-based ring contact Resistive Random Access Memory device

In this work, tantalum oxide (TaOJ based ring contact Resistive Random Access Memory (RRAM) devices with varying TaO_x thicknesses (5, 10 and 15 nm) were demonstrated and evaluated. TaO_x layers were deposited using atomic layer deposition and were in contact with a Platinum (Pt) top electrode and Tantalum (Ta) sidewall electrode. RRAM devices with different TaO_x thickness were compared to investigate the scaling capabilities for potential 3D RRAM application. It was found that as the TaO_x thickness scaled to 5 nm, reasonable switching characteristics with less cycling variations were obtained which indicates that a thickness of 5 nm TaO_x is capable of being implemented in sidewall RRAM geometries.