• DocumentCode
    3667895
  • Title

    Challenges and responses for virtual silicon

  • Author

    Keun-Ho Lee

  • Author_Institution
    CAE Team, Semiconductor R&
  • fYear
    2015
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    The dimensional evolution of device has increased the importance of TCAD simulation and its multilateral expansion to process and design domains. Challenges for achieving virtual silicon as a holistic simulation analysis and recent progresses are discussed.
  • Keywords
    "Silicon","Stress","Integrated circuit modeling","Three-dimensional displays","Surface topography","Performance evaluation","Surface treatment"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292263
  • Filename
    7292263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667895