3D electro-thermal simulations of bulk FinFETs with statistical variations

This paper investigates the impact of self-heating on the statistical variability of bulk FinFETs. 3D electro-thermal simulations have been performed using the GSS statistical-variability-aware device simulator GARAND, recently enhanced with a thermal simulation module. A bulk FinFET, designed to meet the specifications for the 14/16nm CMOS technology generation, is used as a test bed, taking into account the combined effects of gate edge roughness, fin edge roughness and metal gate granularity. The statistical distribution of key figures of merit, especially the on-current, under the influence of thermal effects, is analysed.