Electrothermal simulation of ultra-scale MOSEFT

To investigate self-heating effects in double gate MOSFETs, a simulator solving self-consistently the Boltzmann transport equations (BTE) for both electrons and phonons has been developed. A Monte Carlo (MC) solver for electrons is coupled with a direct solver for the phonon transport. This method is particularly efficient to evaluate accurately the phonon emission and absorption spectra in both real and energy spaces. The resulting degradation of the I-V characteristics is estimated for a 20 nm-long Double-Gate MOSFET.