Simulation of bipolar organic semiconductor devices based on the master equation including generation and recombination

A new model for the simulation of bipolar organic semiconductor devices by a three-dimensional master equation is proposed. A single-layer diode with a cubic lattice is investigated. Generation and recombination of electrons and holes are included consistently, where a single parameter, the lifetime, controls the rates. Current-voltage characteristics, carrier density and recombination rate profiles of symmetric and asymmetric bipolar devices are presented with Gaussian disorder of hopping site energy levels for electrons and holes.