• DocumentCode
    3667914
  • Title

    Analysis of the soft error rates on 65-nm SOTB and 28-nm UTBB FD-SOI structures by a PHITS-TCAD based simulation tool

  • Author

    Kuiyuan Zhang;Shohei Kanda;Junki Yamaguchi;Jun Furuta;Kazutoshi Kobayashi

  • Author_Institution
    Graduate School of Science &
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We estimate the SERs of 65-nm SOTB(Silicon on Thin BOX) and 28-nm UTBB(Ultra Thin Body and BOX) FD-SOI processes by decreasing the supply voltage. Alpha, neutron irradiation experiments and Monte-Carlo based simulations are compared in this work. The SERs can be analyzed by the simulation tool with only layout pattern of test chips. The simulation results are consistent with the alpha and neutron irradiation measurement results.
  • Keywords
    "Radiation effects","Neutrons","Latches","Solid modeling","Single event upsets","Analytical models","Simulation"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292282
  • Filename
    7292282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667914