DocumentCode
3667921
Title
RF technology optimization by a fast method for linearity determination
Author
T. V. Dinh;A. Vohra;J. Melai;T. Vanhoucke;P. H. C. Magnee;D. B. M. Klaassen
Author_Institution
NXP Semiconductors Leuven, Interleuvenlaan 80, 3001, Belgium
fYear
2015
Firstpage
182
Lastpage
185
Abstract
This paper introduces a new methodology to determine the small signal linearity of a device directly from 2-port Y-parameters. With that approach, a 10-fold reduction of the simulation time in a comparison with traditional transient or harmonic balance simulations can be achieved, which enables a fast route for RF device and process technology optimization in an industrial environment. It is also shown that the linearity performance should be taken into account for the device optimization.
Keywords
"Linearity","Radio frequency","Harmonic analysis","Optimization","Silicon germanium","Power system harmonics","Performance evaluation"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292289
Filename
7292289
Link To Document