• DocumentCode
    3667929
  • Title

    Simulation of plasma immersion ion implantation into silicon

  • Author

    Alex Burenkov;Juergen Lorenz;Yohann Spiegel;Frank Torregrosa

  • Author_Institution
    Fraunhofer IISB, Erlangen, Germany
  • fYear
    2015
  • Firstpage
    218
  • Lastpage
    221
  • Abstract
    A numerically efficient model for the simulation of ion implantation doping profiles in silicon after pulsed plasma immersion ion implantation is suggested. The model is based on an analytical formula for the energy distribution of the ions extracted from the plasma and on the application of this energy distribution in a Monte-Carlo simulator for conventional ion implantation. The model is verified using examples of BF3 and AsH3 plasmas for p-type and n-type doping in silicon, respectively.
  • Keywords
    "Plasmas","Semiconductor process modeling","Silicon","Doping profiles","Boron","Numerical models","Ion implantation"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292298
  • Filename
    7292298
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3667929