Extending drift-diffusion paradigm into the era of FinFETs and nanowires

This paper presents a feasibility study that the drift-diffusion model can capture the ballistic transport of FinFETs and nanowires with a simple model extension. For FinFETs, Monte Carlo simulation is performed and the ballistic mobility is calibrated to linear & saturation currents. It is validated that the calibrated model works over a wide range of channel length and channel stress. The ballistic mobility model is then applied to a nanowire with 5nm design rules. Finally, the technology scaling trend of the ballistic ratio is explored.