Advanced TCAD simulation of local mismatch in 14nm CMOS technology FinFETs

Local statistical variability (mismatch) is very important in advanced CMOS technologies critically affecting, among others, SRAM supply and holding voltages, performance and yield. TCAD simulation of statistical variability is essential for identification of variability sources and their control in the technology development and optimization. It also plays an important role in the development of accurate statistical compact models for SRAM design, statistical standard cell characterization and statistical circuit simulation and verification. In this paper we compare the TCAD simulation results of statistical variability in 14nm CMOS FinFET technology with Silicon measurements in order to understand the relative role of key statistical variability sources, to assist the technology optimization and to generate target characteristics for statistical compact model extraction.