Multi-Subband Ensemble Monte Carlo simulation of Si nanowire MOSFETs

The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, including a full quantun treatment of transversal two-dimensional confinement, motivated the development of a three-dimensional Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator. Here we describe the last improvements of such simulator including better convergence properties and statistical improvements for the computation of the drain current. The simulator is employed to study MOS devices based on Si nanowires with lateral sizes of a few nanometers. The results show the importance of a proper two-dimensional treatment of quantum confinement, which can be achieved with our simulator.