Impact of deep p-well structure on single event latchup in bulk CMOS

The effect of a deep p-well structure on radiation-induced single event latchup is studied through three-dimensional numerical simulations. Our simulation results show that the deep p-well structure effectively prevents single event latchup even in the case that well taps are significantly far from the source region of a CMOS device. We demonstrate that the deep p-well structure creates an additional conduction path for holes and suppresses the potential perturbation in a p-well.