A moving mesh method for device simulation

A moving mesh method for semiconductor device simulation is developed which effectively compromises accuracies without increasing mesh number. In this method, mesh positions are shifted referring to the solution of the previous bias condition, or to the Newton corrections. The method is applied to solve PN-junctions and MOSFETs. The method provides an effective way to cover the changes of carrier distributions depending on bias conditions. The algorithm is simple and effective, and can be widely used.