• DocumentCode
    3667991
  • Title

    Transient 3-D TCAD simulation of multiple snapback event in mixed-mode test for mutual relation between protection devices

  • Author

    Hyoungcheol Kwon;Yoonsung Lee;Sangyong Kim;Manho Seung;Changyeol Lee;Seokkiu Lee;Sungjoo Hong

  • Author_Institution
    Research and Development Division, SK Hynix Semiconductor Inc., Icheon, South Korea
  • fYear
    2015
  • Firstpage
    467
  • Lastpage
    470
  • Abstract
    Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual relation between protection devices affects the ESD robustness. If there is a big imbalance of individual ESD characteristics between the devices under the mixed-mode test, the lattice temperature hot-spot and failure may occurs in the device even though the robustness of the other connected device is lower than that of the device in the single-device test.
  • Keywords
    "Electrostatic discharges","Lattices","Robustness","Transient analysis","Stress","Integrated circuit modeling","Solid modeling"
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-7858-1
  • Type

    conf

  • DOI
    10.1109/SISPAD.2015.7292363
  • Filename
    7292363