DocumentCode
3667991
Title
Transient 3-D TCAD simulation of multiple snapback event in mixed-mode test for mutual relation between protection devices
Author
Hyoungcheol Kwon;Yoonsung Lee;Sangyong Kim;Manho Seung;Changyeol Lee;Seokkiu Lee;Sungjoo Hong
Author_Institution
Research and Development Division, SK Hynix Semiconductor Inc., Icheon, South Korea
fYear
2015
Firstpage
467
Lastpage
470
Abstract
Mutual ESD behavior dependency between multiple devices under Transmission Line Pulse stress was investigated using transient 3-D TCAD simulation. Interestingly, the transient response of drain voltage has multiple snapback profiles in the mixed-mode test. When one of the devices in the mixed-mode test is turned on, the current waveform of the other adjacent devices shows snapback profile. This mutual relation between protection devices affects the ESD robustness. If there is a big imbalance of individual ESD characteristics between the devices under the mixed-mode test, the lattice temperature hot-spot and failure may occurs in the device even though the robustness of the other connected device is lower than that of the device in the single-device test.
Keywords
"Electrostatic discharges","Lattices","Robustness","Transient analysis","Stress","Integrated circuit modeling","Solid modeling"
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2015 International Conference on
ISSN
1946-1569
Print_ISBN
978-1-4673-7858-1
Type
conf
DOI
10.1109/SISPAD.2015.7292363
Filename
7292363
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