• DocumentCode
    3670091
  • Title

    Physical damage effect of microelectrodes under nanosecond pulse induced breakdown

  • Author

    Guodong Meng;Yonghong Cheng;Chengye Dong;Lei Chen;Chuang Men

  • Author_Institution
    State Key Lab. of Electrical Insulation and Power Equipment, Xi´an Jiaotong University, 28 Xianning West Road, Shaanxi 710049, China
  • fYear
    2015
  • fDate
    7/1/2015 12:00:00 AM
  • Firstpage
    927
  • Lastpage
    930
  • Abstract
    Electrical breakdown due to overvoltage may result in a series of performance degradation and physical damage to microelectronic devices. In this paper, we present the physical damage effect of nanogaps in microelectronic devices and explore the relationship between the morphology change and injected energy during breakdown process. The nanoscale discharge characteristics experimental system based on a focused ion beam, a nanometer manipulator and a DC power supply generator was established, which could be used to simulate the typical nanosecond pulse impact event while electrostatic charge accumulates between the nanogaps. Different types of voltage stresses were applied to tungsten microelectrodes so as to understand the relationship between physical morphology change and injected energy. The morphology change process was obtained and the mechanism for the multi-physical coupling induced physical damage was then put forward.
  • Keywords
    "Morphology","Electrodes","Surface morphology","Nanoscale devices","Discharges (electric)","Vacuum breakdown"
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials (ICPADM), 2015 IEEE 11th International Conference on the
  • Electronic_ISBN
    2160-9241
  • Type

    conf

  • DOI
    10.1109/ICPADM.2015.7295425
  • Filename
    7295425