DocumentCode
3670091
Title
Physical damage effect of microelectrodes under nanosecond pulse induced breakdown
Author
Guodong Meng;Yonghong Cheng;Chengye Dong;Lei Chen;Chuang Men
Author_Institution
State Key Lab. of Electrical Insulation and Power Equipment, Xi´an Jiaotong University, 28 Xianning West Road, Shaanxi 710049, China
fYear
2015
fDate
7/1/2015 12:00:00 AM
Firstpage
927
Lastpage
930
Abstract
Electrical breakdown due to overvoltage may result in a series of performance degradation and physical damage to microelectronic devices. In this paper, we present the physical damage effect of nanogaps in microelectronic devices and explore the relationship between the morphology change and injected energy during breakdown process. The nanoscale discharge characteristics experimental system based on a focused ion beam, a nanometer manipulator and a DC power supply generator was established, which could be used to simulate the typical nanosecond pulse impact event while electrostatic charge accumulates between the nanogaps. Different types of voltage stresses were applied to tungsten microelectrodes so as to understand the relationship between physical morphology change and injected energy. The morphology change process was obtained and the mechanism for the multi-physical coupling induced physical damage was then put forward.
Keywords
"Morphology","Electrodes","Surface morphology","Nanoscale devices","Discharges (electric)","Vacuum breakdown"
Publisher
ieee
Conference_Titel
Properties and Applications of Dielectric Materials (ICPADM), 2015 IEEE 11th International Conference on the
Electronic_ISBN
2160-9241
Type
conf
DOI
10.1109/ICPADM.2015.7295425
Filename
7295425
Link To Document