Parasitic extraction procedure for silicon carbide power modules

Parasitic impedances play a significant role in determining the achievable performance of power electronics applications based on wide band-gap semiconductors. Unlike applications based on traditional devices, this new class of applications has spectral content in the "near-RF" domain, which can reveal anomalous system behavior by exciting resonances in these parasitic impedances. To understand and mitigate this behavior, it is important that application designers have some means for estimating the interconnect impedances within multi-chip power modules (MCPM´s). This paper proposes a straightforward methodology for extracting estimates of parasitic impedances within the MCPM structure, without a-priori knowledge of the module geometry or interconnection details. The practical utility of the proposed approach is demonstrated through the execution of a case study involving a commercially-available MCPM; and the resulting impedance estimates are empirically validated through switching experiments.