Development of a board-level integrated silicon carbide MOSFET power module for high temperature application

A board-level integrated silicon carbide (SiC) MOSFET power module is developed in this work for high temperature and high power density applications. Specifically, a silicon-on-insulator (SOI) based gate driver is designed, fabricated and tested at different switching frequencies and temperatures. Also, utilizing high temperature packaging technologies, a 1200 V / 100 A SiC MOSFET phase-leg power module is built. The switching performance of the fabricated power module is fully evaluated at different temperatures up to 225 °C. Moreover, a buck converter prototype incorporating the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated within a wide range from 10 kHz to 100 kHz, with its junction temperature monitored by a thermo-sensitive electrical parameter (TSEP). The experimental results demonstrate that the integrated power module is able to operate at a junction temperature greater of 232 °C.