• DocumentCode
    3672039
  • Title

    Parallel extended gate MOSFET pH sensing system

  • Author

    Abdul Mu´izz Kahar;Faiz Kamaruzaman;Mohamad Faisal Azlan;Sukreen Hana Herman;Wan Fazlida Hanim Abdullah

  • Author_Institution
    Fakulti Kejuruteraan Elektrik, Universiti Teknologi MARA, Shah Alam, Selangor, Malaysia
  • fYear
    2015
  • fDate
    4/1/2015 12:00:00 AM
  • Firstpage
    134
  • Lastpage
    137
  • Abstract
    This project presents a pH sensing monitoring system using parallel extended gate structure that capture the sensor response to changes in ionic activities in solutions. The objective of this project is to propose a sensing array of conventional MOSFETs that allows detachable sensing membranes. The main task of the intended application is to find the pH value of an ionic solution that is being tested. The sensing membrane is a layer deposited on a conductive substrate, attached with a wire to form an extended gate. The task of the readout circuit is to detect the threshold voltage changes through Vout of the sensing MOSFET, treating the new threshold voltage as a combined effect of reference electrode/solution/extended membrane/sensing MOSFET. A model is constructed to demonstrate the ability of the extended gate setup to detect three pH states of three parallel solutions. The interfacing circuit biases the sensing MOSFET with a constant drain current of 100μA and 0.5 V drain-source voltage to maintain the MOSFET in isothermal region.
  • Keywords
    "MOSFET","Temperature sensors","Logic gates","Resistors","Monitoring","Arrays"
  • Publisher
    ieee
  • Conference_Titel
    Computer Applications & Industrial Electronics (ISCAIE), 2015 IEEE Symposium on
  • Type

    conf

  • DOI
    10.1109/ISCAIE.2015.7298342
  • Filename
    7298342