• DocumentCode
    3674550
  • Title

    GaN/InGaN/GaN disk-in-wire light emitters: polar vs. nonpolar orientations

  • Author

    Md. R. Nishat;S. Alqahtani;Y. Wu;V. Chimalgi;S. Ahmed

  • Author_Institution
    Department of Electrical and Computer Engineering, Southern Illinois University at Carbondale 1230 Lincoln Drive, Carbondale, IL 62901, USA.
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we computationally evaluate and compare the performance of recently reported In0.25Ga0.75N/GaN disk-in-wire light emitting diodes (LED) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic bandstructure and interband optical transition rates. The microscopically determined transition parameters were then incorporated into a TCAD LED simulator to obtain the device terminal characteristics. The m-plane structure was found to exhibit higher spontaneous emission rate and improved (along with a delayed droop) internal quantum efficiency (IQE) characteristic.
  • Keywords
    "Optical polarization","Stimulated emission","Gallium nitride","Light emitting diodes","Biomedical optical imaging","Optical imaging","Optical coupling"
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2015 International Workshop on
  • Type

    conf

  • DOI
    10.1109/IWCE.2015.7301936
  • Filename
    7301936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3674550