Characterization and evaluation of SiC devices for DC-DC power supply applications

Silicon Carbide MOSFETs and Schottky diodes can operate at higher voltages and higher temperatures than their Silicon counterparts. Nowadays, SiC devices can compete with Si ultrafast diodes and Si IGBTs in terms of efficiency and converter volume. This paper shows the experimental characterization of SiC devices and their comparison with Si devices to demonstrate their superior performance in resonant DC-DC power converters. Finally, preliminary experimental measurements from the constructed resonant converter are shown.