• DocumentCode
    3679713
  • Title

    Comparison of the power semiconductor design rating of different inverter topologies for the drive inverter of electric vehicles

  • Author

    Stephan Brueske;Berthold Benkendorff;Robert Kulpe;Friedrich W. Fuchs

  • Author_Institution
    Institute for Power Electronics Christian-Albrechts-Universitaet zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
  • fYear
    2015
  • Firstpage
    3643
  • Lastpage
    3650
  • Abstract
    A comparison of the two-level voltage-source inverter, the three-level Neutral-Point-Clamped inverter and the T-Type inverter based on the power semiconductor rating is presented for drive inverters of electric vehicles. The comparison of the power semiconductor design rating is done for four different drive train configurations: normal operation with a constant DC-link voltage, an overload capability, a varying DC-link due to the state-of-charge of the battery and a variable DC-link voltage which can be generated by an additional DC-DC converter. The design is based on operation performance and power loss calculation. The power losses of the two three-level topologies are evaluated experimentally.
  • Keywords
    "Inverters","Semiconductor diodes","Topology","Batteries","Insulated gate bipolar transistors","Modulation","Switching loss"
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
  • ISSN
    2329-3721
  • Electronic_ISBN
    2329-3748
  • Type

    conf

  • DOI
    10.1109/ECCE.2015.7310175
  • Filename
    7310175