DocumentCode
3679713
Title
Comparison of the power semiconductor design rating of different inverter topologies for the drive inverter of electric vehicles
Author
Stephan Brueske;Berthold Benkendorff;Robert Kulpe;Friedrich W. Fuchs
Author_Institution
Institute for Power Electronics Christian-Albrechts-Universitaet zu Kiel, Kaiserstr. 2, 24143 Kiel, Germany
fYear
2015
Firstpage
3643
Lastpage
3650
Abstract
A comparison of the two-level voltage-source inverter, the three-level Neutral-Point-Clamped inverter and the T-Type inverter based on the power semiconductor rating is presented for drive inverters of electric vehicles. The comparison of the power semiconductor design rating is done for four different drive train configurations: normal operation with a constant DC-link voltage, an overload capability, a varying DC-link due to the state-of-charge of the battery and a variable DC-link voltage which can be generated by an additional DC-DC converter. The design is based on operation performance and power loss calculation. The power losses of the two three-level topologies are evaluated experimentally.
Keywords
"Inverters","Semiconductor diodes","Topology","Batteries","Insulated gate bipolar transistors","Modulation","Switching loss"
Publisher
ieee
Conference_Titel
Energy Conversion Congress and Exposition (ECCE), 2015 IEEE
ISSN
2329-3721
Electronic_ISBN
2329-3748
Type
conf
DOI
10.1109/ECCE.2015.7310175
Filename
7310175
Link To Document