Effect of load parasitics on the losses and ringing in high switching speed SiC MOSFET based power converters

In this paper the effect of parasitic elements of the load connected to a power converter are considered. For the case of a high switching speed converter the equivalent parallel capacitance of the load or line inductance will cause a potentially large current overshoot, which will in turn lead to increased switching losses. This paper considers the relation between the operating conditions of the converter, such as switching speed, with the loss due to the parasitic elements. The inclusion of a small output filter inductor to reduce the switching loss and ringing is analyzed and a method for calculating suitable component values to reach a desired target performance is presented.