• DocumentCode
    3682853
  • Title

    250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier

  • Author

    Paolo Valerio Testa;Robert Paulo;Corrado Carta;Frank Ellinger

  • Author_Institution
    Tech. Univ., Dresden, Germany
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents a cascaded single-stage distributed amplifier (CSSDA) for wideband applications implemented in a 0.13 μm SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). A 3 dB upper frequency of 250 GHz, a bandwidth of 170 GHz, and a gain of 13 dB are demonstrated for the fabricated CSSDA. The circuit requires a chip area of 0.23 mm2 and 74 mW of DC power. Compared against the state of the art, the presented design achieves the highest speed and the smallest area.
  • Keywords
    "Gain","Bandwidth","Distributed amplifiers","Silicon germanium","BiCMOS integrated circuits","Capacitors","Resistors"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314459
  • Filename
    7314459
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682853