• DocumentCode
    3682857
  • Title

    59-dBOmega 68-GHz Variable Gain-Bandwidth Differential Linear TIA in 0.7-µm InP DHBT for 400-Gb/s Optical Communication Systems

  • Author

    Jean-Yves Dupuy;Filipe Jorge;Muriel Riet;Virginie Nodjiadjim;Herve Aubry;Agnieszka Konczykowska

  • Author_Institution
    III-V Lab., Alcatel-Thales, Marcoussis, France
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report a variable-gain and variable-bandwidth differential linear transimpedance amplifier (TIA-VGA) realised in a 0.7-μm indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The circuits yields 59-dBΩ / 900-Ω differential transimpedance gain with 20-dB control and 68-GHz -3-dB bandwidth with 30-GHz control. Output-referred 1-dB-compression single-ended amplitude is larger than -4-dBm (400mVpp) up to 60GHz. High quality On-Off-Keying (OOK) eye diagrams are measured at 64 GBd. Consuming less than 475 mW, this circuit exhibits the largest bandwidth for a linear TIA-VGA, to our knowledge, along with wide-range gain and bandwidth controls. This makes it a particularly suitable and flexible candidate for high-symbol-rate photoreceivers dedicated to next generation 400-Gb/s and 1-Tb/s optical communication systems.
  • Keywords
    "Gain","Bandwidth","Indium phosphide","III-V semiconductor materials","Optical fiber communication","Resistors","Noise"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314463
  • Filename
    7314463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682857