• DocumentCode
    3682914
  • Title

    Progress in InP HEMT Submillimeter Wave Circuits and Packaging

  • Author

    K. Leong;X. B. Mei;W. Yoshida;M. Lange;A. Zamora;B. Gorospe;W. R. Deal

  • Author_Institution
    Northrop Grumman Corp., Redondo Beach, CA, USA
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In the paper, we report on recent progress in scaling InP HEMT MMIC technology to Submillimeter (SMMW) and Terahertz (THz) frequencies. We show that amplification has reached 0.85 THz, with low noise and power amplification in packaged amplifiers at this frequency. Moreover, we show that the entire receiver and exciter function, including mixing and frequency multiplication can be accomplished in the same technology.
  • Keywords
    "Substrates","Indium phosphide","III-V semiconductor materials","Receivers","HEMTs","Integrated circuits"
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
  • Type

    conf

  • DOI
    10.1109/CSICS.2015.7314521
  • Filename
    7314521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3682914