• DocumentCode
    3688238
  • Title

    Linear mode CMOS compatible p-n junction avalanche photodiode with operating voltage below 9V

  • Author

    Md. Mottaleb Hossain;Payman Zarkesh-Ha;Majeed M. Hayat

  • Author_Institution
    Center for High Technology Materials and Department of Electrical &
  • fYear
    2015
  • Firstpage
    436
  • Lastpage
    437
  • Abstract
    This paper reports linear-mode p-n junction silicon avalanche photodiodes (APD) fabricated in 1 μm standard CMOS process. Measured mean gain of ~50 was obtained at a sufficiently low operating voltage of 8.7 V.
  • Keywords
    "Wavelength measurement","CMOS integrated circuits","Detectors"
  • Publisher
    ieee
  • Conference_Titel
    Photonics Conference (IPC), 2015
  • ISSN
    1092-8081
  • Type

    conf

  • DOI
    10.1109/IPCon.2015.7323686
  • Filename
    7323686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3688238