• DocumentCode
    3689005
  • Title

    Scalability of planar FDSOI and FinFETs and What´s in store for the future beyond that?

  • Author

    Bruce B. Doris;Terence Hook

  • Author_Institution
    IBM Research T. J. Watson Research Center, Yorktown Heights, NY 10598
  • fYear
    2015
  • Firstpage
    160
  • Lastpage
    163
  • Abstract
    Conventional planar transistors have been used throughout the semiconductor industry for the past several decades. Further miniaturization of conventional devices has been proven to be a significant challenge and thus the industry has transitioned to Planar Fully Depleted FETs and FinFETs. As we look out at technologies beyond 7nm node there are many barriers which appear to limit the scalability of FinFETs. Therefore it is important to consider the device architecture options that can serve as a replacement and enable further scaling to meet future technology requirements. This invited talk discusses the scalability of Fully Depleted FETs and FinFETs and also proposes options to enable continued scaling beyond 7nm node.
  • Keywords
    "Logic gates","Electrostatics","Performance evaluation","Silicon","Wires","Strain","Transistors"
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference (ESSDERC), 2015 45th European
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4673-7133-9
  • Electronic_ISBN
    2378-6558
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2015.7324738
  • Filename
    7324738