• DocumentCode
    3689847
  • Title

    High-voltage monolithic 3D capacitors based on through-silicon-via technology

  • Author

    Saeideh Gruenler;Gudrun Rattmann;Tobias Erlbacher;Anton J. Bauer;Lothar Frey

  • Author_Institution
    Fraunhofer IISB, Erlangen, Germany
  • fYear
    2015
  • fDate
    5/1/2015 12:00:00 AM
  • Firstpage
    253
  • Lastpage
    256
  • Abstract
    High-voltage monolithic 3D capacitors operating at breakdown voltages up to 200 V are fabricated based on through silicon-via technology. Electric characteristics of monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of planar capacitors with the same area and dielectric thickness. Impact of the 3D capacitors´ architecture on their electrical properties is studied for various patterns and geometries.
  • Keywords
    "Decision support systems","Fabrication","Capacitors"
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International
  • ISSN
    2380-632X
  • Electronic_ISBN
    2380-6338
  • Type

    conf

  • DOI
    10.1109/IITC-MAM.2015.7325655
  • Filename
    7325655
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3689847