• DocumentCode
    3691593
  • Title

    Terahertz characteristics of InGaAs with periodically-positioned InAlAs insertion layers

  • Author

    Dong Woo Park;Jin Soo Kim;Sam Kyu Noh;Young Bin Ji;Seung Jae Oh;Tae-In Jeon

  • Author_Institution
    Division of Advanced Materials Engineering, Chonbuk National University, Jeonju 561-756 Korea
  • fYear
    2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We present terahertz (THz) generation and detection characteristics of InGaAs with periodically-positioned InAlAs insertion layers (InGaAs PPIL). A THz transmitter with the InGaAs PPIL showed three times higher than that of an InGaAs epilayer without the insertion layer at the current signal for THz generation properties. Also, the detection properties of a THz receiver with the InGaAs PPIL showed over twenty-five times higher than that of a simple InGaAs epilayer. Also current signals of the InGaAs PPIL was improved with increasing the number of the InAlAs insertion layers.
  • Keywords
    "Indium gallium arsenide","Charge carrier lifetime","Physics","Current measurement","Resistance","Transmitters"
  • Publisher
    ieee
  • Conference_Titel
    Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
  • ISSN
    2162-2027
  • Electronic_ISBN
    2162-2035
  • Type

    conf

  • DOI
    10.1109/IRMMW-THz.2015.7327809
  • Filename
    7327809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3691593