DocumentCode
36918
Title
A Fast Voltage Clamp Circuit for the Accurate Measurement of the Dynamic ON-Resistance of Power Transistors
Author
Gelagaev, Ratmir ; Jacqmaer, Pieter ; Driesen, Johan
Author_Institution
Dept. of Electr. Eng. (ESAT), Catholic Univ. of Leuven, Leuven, Belgium
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
1241
Lastpage
1250
Abstract
For determining the dynamic ON-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. The novel heterostructure wide-bandgap (e.g., AlGaN/GaN) transistors inherently suffer from the current collapse phenomenon, causing the dynamic ON-resistance to be different from the static. Measuring voltage waveforms using an oscilloscope distorts the characteristics of an amplifier inside the oscilloscope when the range of the measurement channel is not set wide enough to measure both ON-state and OFF-state voltage levels, resulting in failure to accurately measure the voltage waveforms. A novel voltage clamp circuit improving the accuracy of the transistor´s ON-state voltage measurement is presented. Unlike the traditional clamping circuit, the presented voltage clamp circuit does not introduce delay caused by RC time constants, keeping the voltage waveform clear, even during state transitions of the device under test. The performance of the presented circuit is illustrated by measurements on a 2-MHz inverted buck converter.
Keywords
clamps; electric resistance measurement; power transistors; semiconductor device measurement; semiconductor device testing; voltage measurement; wide band gap semiconductors; OFF-state voltage levels; RC time constants; amplifier characteristics; current collapse phenomenon; current waveforms; device under test; dynamic ON-resistance measurement; fast voltage clamp circuit; frequency 2 MHz; heterostructure wide-bandgap transistors; inverted buck converter; measurement channel; oscilloscope; power transistors; switching operation; transistor ON-state voltage measurement; voltage waveform measurement; Clamps; Current measurement; Mirrors; Schottky diodes; Semiconductor device measurement; Transistors; Voltage measurement; Accuracy improvement; charge trapping; current collapse; dynamic on-resistance; heterostructure wide-bandgap transistors; measurements; voltage clamping;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/TIE.2014.2349876
Filename
6880783
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