Advantages of subthreshold operation of asymmetric self-cascode SOI transistors aiming at analog circuit applications

This paper presents the analog characteristics of asymmetric self-cascode SOI nMOSFETs biased in subthreshold region aiming at low power low voltage analog applications. It is shown for the first time that the advantages of this structure in comparison to single transistors and symmetric self-cascode is sustained below threshold and improves as device moves to subthreshold.